کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1828484 | 1027432 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Development of thin pixel sensors and a novel interconnection technology for the SLHC
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
We present an R&D activity aiming to develop a new detector concept in the framework of the ATLAS pixel detector upgrade in view of the Super-LHC. The new devices combine 75-150 μm thick pixels sensors with a vertical integration technology. A new production of thin pixel sensors on n- and p-type material is under way at the MPI Semiconductor Laboratory. These devices will be connected to the ATLAS read-out electronics with the new Solid-Liquid InterDiffusion technique as an alternative to the bump-bonding process. We also plan for the signals to be extracted from the back of the electronics wafer through Inter-Chip-Vias. The compatibility of the Solid-Liquid InterDiffusion process with the silicon sensor functionality has already been demonstrated by measurements on two wafers hosting diodes with an active thickness of 50 μm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 591, Issue 1, 11 June 2008, Pages 229-232
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 591, Issue 1, 11 June 2008, Pages 229-232
نویسندگان
A. Macchiolo, L. Andricek, M. Beimforde, J. Dubbert, N. Ghodbane, O. Kortner, H. Kroha, H.G. Moser, R. Nisius, R.H. Richter,