The electrical response of PbI2 films to γ-ray irradiation and the limitation of film thickness

It was shown that γ-ray induced photocurrent in PbI2 films is determined by the competition of two processes: electron–hole pair generation due to X-ray photon absorption and their recombination on surface defects. As a result of these processes, PbI2 films of (94±4) μm in thickness have maximal charge collection properties. Electron–hole pair creation energy was estimated using the I–t and I–V characteristics of the films. The values obtained with these methods, (8.8±0.5) and (3.4±1.4) eV, respectively, are close to the theoretical prediction.