Radiation hardness properties of full-3D active edge silicon sensors

After 8.6×1015 n1 MeVeq cm−2 the signal collected was ∼38% and corresponded to ∼7200e− for a substrate thickness of 235 μm. Signal efficiency, radiation-induced leakage current and related damage parameters are discussed here and compared with simulations. Full-3D silicon detectors with active edges are being considered for forward proton tagging at the LHC, for the ATLAS pixel B-layer replacement and for the ATLAS pixel upgrade.