کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1828954 | 1027443 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The effect of doping on X-ray response of TlBr crystals
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The effect of doping on X-ray response of TlBr crystals The effect of doping on X-ray response of TlBr crystals](/preview/png/1828954.png)
چکیده انگلیسی
The response of TlBr crystals (both undoped and doped with either In1+ or Pb2+) to X-ray radiation was studied. It was experimentally observed that the response of TlBr, TlBr:Pb2+ and TlBr:In1+ crystals to X-ray irradiation strongly depends on the polarity of irradiated contact. A simple model based on X-ray and charge carriers’ interaction qualitatively explained the effect. The Tl1+ ions’ X-ray-induced mobility of 6.6×10−14 cm2/V s and diffusion coefficient of 1.7×10−15 cm2/s at room temperature were estimated from X-ray-induced current–time measurements of TlBr and TlBr:Pb2+ crystals using suggested model.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 594, Issue 2, 1 September 2008, Pages 206–209
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 594, Issue 2, 1 September 2008, Pages 206–209
نویسندگان
Yuri Dmitriev, Leonard J. Cirignano, Kanai S. Shah,