کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1829120 | 1526490 | 2008 | 7 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Electrical and spectroscopic characterization of 7-cell Si-drift detectors Electrical and spectroscopic characterization of 7-cell Si-drift detectors](/preview/png/1829120.png)
Ten detector modules based on monolithic 7-cell Si-drift detectors with integrated junction field effect transistors (JFETs) are currently under production. The modules’ hexagonal shape with a wrench size of 16 mm allows very small distances to the samples and a compact multi-module arrangement. The sensors have active areas of ∼50mm2 and a thickness of 450μm. A proper spectroscopy operation of all modules was obtained by five common supply voltages and a 6th voltage which must be individually adopted. Detector capacitances varied from 83 to 145 fF, where statistical spreading caused by device mismatch amounts to 0.4%. On-chip scattering of the JFET's transconductance and source potential in a source-follower configuration are around 1%. Their spreading caused by process variations and device mismatch remain below 8%. Typical spectral resolution and non-linearity is about 300 eV and below 1% between 4.5 and 18 keV, respectively. After irradiation with a total dose of ∼2Mrad the resolution decreases by ∼40%∼40%. By shielding the cell borders and JFETs from direct irradiation with usage of a Zr mask, a spectral peak-to-valley ratio of ∼1000∼1000 was achieved.
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 585, Issues 1–2, 21 January 2008, Pages 76–82