کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1829349 | 1027456 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electron irradiation effects on the organic-on-inorganic silicon Schottky structure
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this study, the effects of high-energy electron irradiation on the electrical characteristics of a Rhodamine-101(Rh101)/p-Si Schottky structure were investigated. Some contact parameters such as barrier height, ideality factor and series resistance were calculated from the current-voltage (I-V) characteristics. It was seen that these three parameters were increased by the electron irradiation. After the electron irradiation, it was also seen that the carrier concentration, the reverse bias current and the capacitance of the device decreased.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 593, Issue 3, 11 August 2008, Pages 544-549
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 593, Issue 3, 11 August 2008, Pages 544-549
نویسندگان
Ã. Güllü, Å. AydoÄan, K. ÅerifoÄlu, A. Türüt,