Development of X-type DEPFET Macropixel detectors

The Depleted P-channel Field Effect Transistor (DEPFET) Macropixel detectors based on the combined detector/amplifier structure have been designed for X-ray spectroscopy applications at the Max-Planck Institute (MPI) Semiconductor Laboratory. Prototypes with several design variants have been fabricated. The outstanding performance of these devices has been previously demonstrated. In this paper, the development of an improved variant is presented, which applies the so-called X-type DEPFET originally designed for XEUS mission as the readout element of a silicon drift detector. The measured energy resolution for Mn-KαMn-Kα line at -30∘C is 122 eV with a pixel size of 1×1mm2. The excellent peak/background ratio of the spectra is observed with a collimated 55Fe source at -30∘C. The integral nonlinearity is less than 0.2% up to 160 keV measured with laser charge injection. Homogeneity is also studied with the laser on a computer controlled X–Y stage.