کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1829466 1027460 2009 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Overview of the recent activities of the RD50 collaboration on radiation hardening of semiconductor detectors for the sLHC
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم ابزار دقیق
پیش نمایش صفحه اول مقاله
Overview of the recent activities of the RD50 collaboration on radiation hardening of semiconductor detectors for the sLHC
چکیده انگلیسی

The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 1016 1 MeV neutron equivalent (neq) cm−2. This is about an order of magnitude higher than the maximum dose for the most exposed silicon detectors in the current machine. RD50 investigates the radiation hardening of silicon sensors from many angles: improvement of the intrinsic tolerance of the substrate material, optimisation of the readout geometry and study of novel design of detectors. A review of some of the recent activities within RD50 is here presented.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 598, Issue 1, 1 January 2009, Pages 54–60
نویسندگان
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