کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1829910 | 1526493 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Test of a MAPS realized in standard non-epitaxial CMOS 0.18μm technology
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
An active pixel sensor has been developed using standard CMOS technology, UMC 0.18μm with no epitaxial layer, with pixel size 4.4×4.4μm, in the framework of the INFN RAPS project. In this work we will report on the results obtained using several types of ionizing radiation sources (laser, X-ray tubes, ββ and γγ) to test extensively the device. Some of the main results obtained are: a signal/noise value for minimum ionizing particles of about 20, a very good linearity of the response, a good spatial confinement of the signal (cluster size of the order of few pixels).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 581, Issues 1–2, 21 October 2007, Pages 335–338
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 581, Issues 1–2, 21 October 2007, Pages 335–338
نویسندگان
L. Servoli, G.M. Bilei, D. Passeri, P. Placidi, D. Biagetti, T. Bianchi, P. Ciampolini, A. Marras, A. Delfanti,