کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1829910 1526493 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Test of a MAPS realized in standard non-epitaxial CMOS 0.18μm technology
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم ابزار دقیق
پیش نمایش صفحه اول مقاله
Test of a MAPS realized in standard non-epitaxial CMOS 0.18μm technology
چکیده انگلیسی

An active pixel sensor has been developed using standard CMOS technology, UMC 0.18μm with no epitaxial layer, with pixel size 4.4×4.4μm, in the framework of the INFN RAPS project. In this work we will report on the results obtained using several types of ionizing radiation sources (laser, X-ray tubes, ββ and γγ) to test extensively the device. Some of the main results obtained are: a signal/noise value for minimum ionizing particles of about 20, a very good linearity of the response, a good spatial confinement of the signal (cluster size of the order of few pixels).

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 581, Issues 1–2, 21 October 2007, Pages 335–338
نویسندگان
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