کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1830043 | 1027471 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
DEPFET, a monolithic active pixel sensor for the ILC
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: DEPFET, a monolithic active pixel sensor for the ILC DEPFET, a monolithic active pixel sensor for the ILC](/preview/png/1830043.png)
چکیده انگلیسی
In a DEPleted Field Effect Transistor (DEPFET) sensor a MOSFET is integrated on a sidewards depleted p-on-n silicon detector, thereby combining the advantages of a fully depleted silicon sensor with in-pixel amplification. A 450 μm thick DEPFET was tested in a testbeam. The S/N was found to be larger than 110. The position resolution is better than 5 μm. At a seed cut of 7σ, the efficiency and purity are both close to 100%. In the readout chip a zero-suppression capability is implemented. The functionality was demonstrated using a radio-active source. The predicted impact parameter resolution of a 50 μm thick DEPFET vertex detector, is much better than required for the International Linear Collider (ILC).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 579, Issue 2, 1 September 2007, Pages 685–689
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 579, Issue 2, 1 September 2007, Pages 685–689
نویسندگان
J.J. Velthuis, R. Kohrs, M. Mathes, A. Raspereza, L. Reuen, L. Andricek, M. Koch, Z. Dolezal, P. Fischer, A. Frey, F. Giesen, P. Kodys, C. Kreidl, H. Krüger, P. Lodomez, G. Lutz, H.G. Moser, R.H. Richter, C. Sandow, D. Scheirich, E. von Törne, M. Trimpl,