Optimization of monolithic charged-particle sensor arrays

Direct-detection CMOS image sensors optimized for charged-particle imaging applications, such as electron microscopy and particle physics, have been designed, fabricated and characterized. These devices directly image charged particles without reliance on image-degrading hybrid technologies such as the use of scintillating materials. Based on standard CMOS Active Pixel Sensor (APS) technology, the sensor arrays use an 8-20 μm thick epitaxial layer that acts as a sensitive region for the generation and collection of ionization electrons resulting from impinging high-energy particles. A range of optimizations to this technology have been developed via simulation and experimental device design. These include the simulation and measurement of charge-collection efficiency vs. recombination, effect of diode area and stray capacitance vs. signal gain and noise, and the effect of different epitaxial silicon depths. Several experimental devices and full-scale prototypes are presented, including two prototypes that systematically and independently vary pixel pitch and diode area, and a complete high-resolution camera for electron microscopy optimized through experiment and simulation. The electron microscope camera has 1×1 k2 pixels with a 5 μm pixel pitch and an 8 μm epitaxial silicon thickness.