کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1830047 1027471 2007 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Evaluation of OKI SOI technology
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم ابزار دقیق
پیش نمایش صفحه اول مقاله
Evaluation of OKI SOI technology
چکیده انگلیسی

The silicon-on-insulator (SOI) CMOS technology has a number of advantages over the standard bulk CMOS technology, such as no latch-up effect, high speed and low power. The fully depleted SOI (FD-SOI) technology provided by OKI Electric Industry Co., Ltd. is realizing the full features of the advantages with lowest junction capacitance. Test element group (TEG) structures of transistors were fabricated and irradiated with protons. The first results are presented.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 579, Issue 2, 1 September 2007, Pages 706–711
نویسندگان
, , , , , , , , , , , ,