کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1830079 | 1027471 | 2007 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Development of semiconductor imaging detectors for a Si/CdTe Compton camera
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Si and CdTe semiconductor imaging detectors have been developed for use in a Si/CdTe Compton camera. Based on a previous study using the first prototype of a Si/CdTe Compton camera, new detector modules have been designed to upgrade the performance of the Compton camera. As the scatter detector of the Compton camera, a stack of double-sided Si strip detector (DSSD) modules, which has four layers with a stack pitch of 2Â mm, was constructed. By using the stack DSSDs, an energy resolution of 1.5Â keV (FWHM) was achieved. For the absorber detector, the CdTe pixel detector modules were built and a CdTe pixel detector stack using these modules was also constructed. A high energy resolution (ÎE/Eâ¼1%) was achieved. The improvement of the detection efficiency by stacking the modules has been confirmed by tests of the CdTe stack. Additionally, a large area CdTe imager is introduced as one application of the CdTe pixel detector module.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 579, Issue 2, 1 September 2007, Pages 871-877
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 579, Issue 2, 1 September 2007, Pages 871-877
نویسندگان
Shin Watanabe, Shin'ichiro Takeda, Shin-nosuke Ishikawa, Hirokazu Odaka, Masayoshi Ushio, Takaaki Tanaka, Kazuhiro Nakazawa, Tadayuki Takahashi, Hiroyasu Tajima, Yasushi Fukazawa, Yoshikatsu Kuroda, Mitsunobu Onishi,