کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1830406 1027478 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Modelling spatial distribution of defects and estimation of electrical degradation of silicon detectors in radiation fields at high luminosity
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم ابزار دقیق
پیش نمایش صفحه اول مقاله
Modelling spatial distribution of defects and estimation of electrical degradation of silicon detectors in radiation fields at high luminosity
چکیده انگلیسی

The irradiation represents a useful tool for determining the characteristics of defects in semiconductors as well as a method to evaluate their degradation, a fact with important technological consequences.In this contribution, starting from available data on the degradation of silicon detector characteristics in radiation fields, these effects are explained in the frame of a model that supposes also the production of the SiFFCD defect due to irradiation. The displacement threshold energies different for different crystallographic axes, considered as parameters of the model, are established and the results obtained could contribute to clarify these controversial aspects.Predictions of the degradation of electrical parameters (leakage current, effective carrier concentration and effective trapping probabilities for electrons and holes) of DOFZ silicon detectors in the hadron background of the LHC accelerator, supposing operation at −10 °C, are done.The non-uniformity of the rate of production of primary defects and of complexes, as a function of depth, for incident particles with low kinetic energy was obtained by simulations using some particular and very simplifying assumptions, suggesting the possible important contribution of the low-energy component of the background spectra to detector degradation.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 583, Issue 1, 11 December 2007, Pages 165–168
نویسندگان
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