کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1830965 | 1526498 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
P-spray implant optimization for the fabrication of n-in-p microstrip detectors
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This work reports on an optimization study of the p-spray profile for the fabrication of n-in-p microstrip silicon detectors. A thorough simulation process of the expected electrical performance of different p-spray technologies was carried out. The best technological options for the p-spray implantation were chosen for the fabrication of miniature n-in-p microstrip detectors on high resistivity FZ wafers at the IMB-CNM clean room. The main conclusions derived from the simulations, and the electrical performance of a sample of the fabricated devices is presented.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 573, Issues 1–2, 1 April 2007, Pages 8–11
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 573, Issues 1–2, 1 April 2007, Pages 8–11
نویسندگان
Celeste Fleta, Manuel Lozano, Giulio Pellegrini, Francesca Campabadal, Joan Marc Rafí, Miguel Ullán,