Characterization of micro-strip detectors made with high resistivity n- and p-type Czochralski silicon

The results of the pre- and post-irradiation characterization of n- and p-type magnetic Czochralski silicon micro-strip sensors are reported. This work has been carried out within the INFN funded SMART project aimed at the development of radiation-hard semiconductor detectors for the luminosity upgrade of the large Hadron collider (LHC). The detectors have been fabricated at ITC-IRST (Trento, Italy) on 4 in wafers and the layout contains 10 mini-sensors. The devices have been irradiated with 24 GeV/c and 26 MeV protons in two different irradiation campaigns up to an equivalent fluence of 3.4×1015 1-MeV n/cm2. The post-irradiation results show an improved radiation hardness of the magnetic Czochralski mini-sensors with respect to the reference float-zone sample.