کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1831022 | 1526498 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Mobility-lifetime product in epitaxial GaAs X-ray detectors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Self-supported thick (200–500 μm), non-intentionally doped, epitaxial GaAs layers are good candidates for X-ray imaging for the following reasons. Their electronic properties are homogeneous over large areas, they can be grown at low cost, the technology to realize pixel detectors of various size is standard, the defect concentration is low and the fluorescence yield is small. Here, we characterize the defects present in the material and evaluate the mobility-lifetime product, using Deep Level Transient Spectroscopy combined with current–voltage and charge collection measurements.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 573, Issues 1–2, 1 April 2007, Pages 228–231
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 573, Issues 1–2, 1 April 2007, Pages 228–231
نویسندگان
G.C. Sun, M. Zazoui, N. Talbi, K. Khirouni, J.C. Bourgoin,