Radiation hardness of high resistivity n- and p-type magnetic Czochralski silicon

The luminosity upgrade of the CERN Large Hadron Collider (SLHC) imposes severe requirements on the radiation hardness of the tracking systems. The CERN RD50 collaboration as well as the Italian INFN SMART project (fifth commission) are focused on the study of new radiation hard materials and devices in view of this upgrade. Preliminary studies on irradiated high resistivity n- and p-type magnetic Czochralski silicon are described in this paper. Electrical characterization and microscopic defect studies were performed on a wide set of diodes made with both n- and p-type float zone and magnetic Czochralski silicon irradiated up to a nominal fluence of 3×1015 cm−2 1 MeV equivalent neutrons. The annealing behavior was studied in detail and a first evaluation of the damage-related parameters is shown.