کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1831125 | 1027492 | 2007 | 14 صفحه PDF | دانلود رایگان |
We describe a device to study reactions relevant for the Single Event Effect (SEE) in microelectronics by means of 200 A and 300 A MeV, inverse kinematics, Si+HSi+H and Si+DSi+D reactions. The work is focused on the possibility to measure Z=2–14Z=2–14 projectile fragments as efficiently as possible. During commissioning and first experiments the fourth quadrant of the CELSIUS storage ring acted as a spectrometer to register fragments in two planes of Si strip detectors in the angular region 0∘–0.6∘0∘–0.6∘. A combination of ring-structured and sector-structured Si strip detector planes operated at angles 0.6∘–1.1∘0.6∘–1.1∘. For specific event tagging a Si++ phoswich scintillator wall operated in the range 3.9∘–11.7∘3.9∘–11.7∘ and Si ΔE–EΔE–E telescopes of CHICSi type operated at large angles.
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 578, Issue 2, 1 August 2007, Pages 385–398