کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1831178 | 1027493 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Development of CdTe pixel detectors for Compton cameras
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
We report our development of CdTe pixel detectors for Si/CdTe semiconductor Compton cameras. We have constructed a prototype of a Si/CdTe Compton camera, consisting of six layered double-sided silicon strip detectors and three CdTe pixel detectors. By using this prototype, we have demonstrated the concept of the Si/CdTe Compton cameras. We have successfully obtained Compton reconstructed images for 80–662 keV gamma-rays. The achieved angular resolution is about 4 degrees for 511 keV gamma-rays. The energy resolution is 14 keV (FWHM) at 511 keV. In order to improve the performance of the Compton camera, we have evaluated all CdTe pixel detectors we have constructed. We found that the II–VV curve is helpful to select good detectors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 567, Issue 1, 1 November 2006, Pages 150–153
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 567, Issue 1, 1 November 2006, Pages 150–153
نویسندگان
Shin Watanabe, Takaaki Tanaka, Kousuke Oonuki, Takefumi Mitani, Shin’ichiro Takeda, Tetsuichi Kishishita, Kazuhiro Nakazawa, Tadayuki Takahashi, Yoshikatsu Kuroda, Mitsunobu Onishi,