کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1831231 | 1027493 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
An improved PIN photodetector with integrated JFET on high-resistivity silicon
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: An improved PIN photodetector with integrated JFET on high-resistivity silicon An improved PIN photodetector with integrated JFET on high-resistivity silicon](/preview/png/1831231.png)
چکیده انگلیسی
We report on a PIN photodetector integrated with a Junction Field Effect Transistor (JFET) on a high-resistivity silicon substrate. Owing to a modified fabrication technology, the electrical and noise characteristics of the JFET transistor have been enhanced with respect to the previous versions of the device, allowing the performance to be significantly improved. In this paper, the main design and technological aspects relevant to the proposed structure are addressed and experimental results from the electrical characterization are discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 567, Issue 1, 1 November 2006, Pages 368–371
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 567, Issue 1, 1 November 2006, Pages 368–371
نویسندگان
Gian-Franco Dalla Betta, Claudio Piemonte, Maurizio Boscardin, Paolo Gregori, Nicola Zorzi, Alberto Fazzi, Giorgio U. Pignatel,