Characterization of Active Pixel Sensors fabricated in CMOS 0.18 μm technology

The suitability of standard CMOS technology for particle detection has been investigated through extensive experimental characterization. Different sensor layout and read-out schemes have been devised and implemented, as well as different test strategies. In particular, CMOS technology suitability for radiation detection purposes has been already demonstrated. In this work, we focus on the performance of Active Pixel Sensors (APS) fabricated in a standard CMOS technology (0.18 μm, twin-tub, featuring no epitaxial layer). Noise effects, time response and cross-talk of the proposed structures have been carefully evaluated. The sensitivity to a Minimum Ionizing Particle stimulus has been eventually extrapolated, with the aim of evaluating potential applications of CMOS APS sensors for High Energy Physics experiments.