کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1831776 | 1027504 | 2006 | 7 صفحه PDF | دانلود رایگان |
We designed and fabricated a novel monolithic active pixel sensor (MAPS), in STMicrolectronics 0.13μm CMOS technology, exploiting the triple well option to implement, at the pixel level, a more complex signal processor and to increase the size of the charge collecting electrode with respect to previously developed CMOS MAPS. This was possible using the deep n-well, available in triple well technology, as a sensing electrode and placing, in the same physical area, part of the readout electronics. The signal processing chain, implemented in the elementary cell, includes a low noise charge preamplifier, a shaper, a discriminator and a latch.The first prototype chips have been successfully tested with very encouraging results. In this work we present the performance of the front-end electronics and the response of the sensor to ionizing radiation.
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 565, Issue 1, 1 September 2006, Pages 195–201