کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1831957 | 1027507 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Transport of the charge carriers in SiC-detector structures after extreme radiation fluences
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The charge collection efficiency (CCE) of SiC-detectors preliminarily irradiated with 8 MeV protons at a fluence of 1014 cm−2 was investigated. Nuclear spectrometric techniques were employed, with 5.4 MeV alpha particles used to test the detectors.A concentration of primarily created defects of 4×1016 cm−3 was estimated and deep compensation of SiC conductivity was observed. In order to obtain a more uniform electric field distribution across the detectors, it is suggested to connect the structure in the forward direction. The experimental data obtained are processed using a simple model of signal formation. The model makes it possible to separate the contributions of the electrons and holes to the CCE.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 569, Issue 3, 21 December 2006, Pages 758–763
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 569, Issue 3, 21 December 2006, Pages 758–763
نویسندگان
N.B. Strokan, A.M. Ivanov, A.A. Lebedev,