کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1832214 | 1027515 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Annealing studies of effective trapping times in silicon detectors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Annealing of effective trapping times of electrons and holes in neutron irradiated silicon detectors was measured at different temperatures 40, 60, 80°C. The evolution of effective trapping times seems to be governed by the first-order process. The effective trapping probability of holes was found to increase by 40% and of electrons to decrease by 20% during annealing. The time constants are of order 600 min at 60°C. The scaling to different temperatures can be obtained from Arrhenius relation with activation energies of around 1 eV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 571, Issue 3, 11 February 2007, Pages 608–611
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 571, Issue 3, 11 February 2007, Pages 608–611
نویسندگان
G. Kramberger, M. Batič, V. Cindro, I. Mandić, M. Mikuž, M. Zavrtanik,