کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1832214 | 1027515 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Annealing studies of effective trapping times in silicon detectors
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Annealing studies of effective trapping times in silicon detectors Annealing studies of effective trapping times in silicon detectors](/preview/png/1832214.png)
چکیده انگلیسی
Annealing of effective trapping times of electrons and holes in neutron irradiated silicon detectors was measured at different temperatures 40, 60, 80°C. The evolution of effective trapping times seems to be governed by the first-order process. The effective trapping probability of holes was found to increase by 40% and of electrons to decrease by 20% during annealing. The time constants are of order 600 min at 60°C. The scaling to different temperatures can be obtained from Arrhenius relation with activation energies of around 1 eV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 571, Issue 3, 11 February 2007, Pages 608–611
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 571, Issue 3, 11 February 2007, Pages 608–611
نویسندگان
G. Kramberger, M. Batič, V. Cindro, I. Mandić, M. Mikuž, M. Zavrtanik,