کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1832412 | 1027518 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A new approach to the design of monolithic active pixel detectors in 0.13μm triple well CMOS technology
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We present a new approach to the design of monolithic active pixel sensors (MAPS) in CMOS technology. By exploiting the triple well option, available in modern deep-submicron processes, it was possible to implement at the pixel level a full analog signal processor and to increase the area of the sensing electrode. These two new features aim to address some limiting aspects of conventional MAPS, such as the read-out speed and the charge collection efficiency. We report on the characterization of the first prototype chip, in particular the calibration with soft X-rays and the response to ββ-rays, demonstrating the capability of the sensor in detecting ionizing radiation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 569, Issue 1, 10 December 2006, Pages 61–64
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 569, Issue 1, 10 December 2006, Pages 61–64
نویسندگان
S. Bettarini, G. Batignani, G. Calderini, M. Carpinelli, R. Cenci, F. Forti, M.A. Giorgi, A. Lusiani, G. Marchiori, F. Morsani, N. Neri, E. Paoloni, M. Rama, G. Rizzo, G. Simi, J. Walsh, L. Ratti, V. Speziali, M. Manghisoni, V. Re, G. Traversi,