Czochralski silicon detectors irradiated with 24GeV/c and 10Â MeV protons

We have irradiated Czochralski silicon (Cz-Si) and Float Zone silicon (Fz-Si) detectors with 24GeV/c and 10 MeV protons. Samples were characterized with Capacitance-Voltage measurements (CV), Transient Current Technique (TCT) and secondary electron backscattering recorded by Scanning Electron Microscope (SEM). We present the evolution of the effective doping concentration as a function of irradiation fluence as well as the introduction rate of negative space charge, β-parameter. According to these measurements, we found that Cz-Si is more radiation hard than Fz-Si. Both TCT and SEM measurements indicated that Space Charge Sign Inversion (SCSI) occurred in the heavily irradiated Fz-Si and in the Cz-Si irradiated with 10 MeV protons. However, the SCSI did not take place in Cz-Si irradiated with 24GeV/c protons even after high irradiation fluence.