کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1832470 | 1027519 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Full-size monolithic active pixel sensors in SOI technology—Design considerations, simulations and measurements results
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
The paper addresses development of full-size monolithic active pixel detectors exploiting silicon-on-insulator (SOI) technology for the integration of a radiation detector and readout electronics in one entity. A general overview of the sensor design is presented and then considerations of the interaction between the readout and sensitive part of the SOI active sensor are discussed. The layout solution used in the design of the full-size prototypes to overcome the problem of the crosstalk between the readout electronics and the detector are reported. Preliminary measurements results of the first full-size prototypes of SOI sensors are also reported.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 568, Issue 1, 30 November 2006, Pages 153–158
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 568, Issue 1, 30 November 2006, Pages 153–158
نویسندگان
H. Niemiec, M. Jastrzab, W. Kucewicz, K. Kucharski, J. Marczewski, M. Sapor, D. Tomaszewski,