کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1832494 | 1027519 | 2006 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
An improved fabrication process for Si-detector-compatible JFETs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We report on JFET devices fabricated on high-resistivity silicon with a radiation detector technology. The problems affecting previous versions of these devices have been thoroughly investigated and solved by developing an improved fabrication process, which allows for a sizeable enhancement in the JFET performance. In this paper, the main features of the fabrication technology are presented and selected results from the electrical and noise characterization of transistors are discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 568, Issue 1, 30 November 2006, Pages 314–321
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 568, Issue 1, 30 November 2006, Pages 314–321
نویسندگان
Claudio Piemonte, Gian-Franco Dalla Betta, Maurizio Boscardin, Paolo Gregori, Nicola Zorzi, Lodovico Ratti,