کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1832494 1027519 2006 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
An improved fabrication process for Si-detector-compatible JFETs
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم ابزار دقیق
پیش نمایش صفحه اول مقاله
An improved fabrication process for Si-detector-compatible JFETs
چکیده انگلیسی

We report on JFET devices fabricated on high-resistivity silicon with a radiation detector technology. The problems affecting previous versions of these devices have been thoroughly investigated and solved by developing an improved fabrication process, which allows for a sizeable enhancement in the JFET performance. In this paper, the main features of the fabrication technology are presented and selected results from the electrical and noise characterization of transistors are discussed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 568, Issue 1, 30 November 2006, Pages 314–321
نویسندگان
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