کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1832872 | 1027527 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Double-layer silicon PIN photodiode X-ray detector for a future X-ray timing mission
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A double-layer silicon detector consisting of two 500-μm500-μm-thick silicon PIN photodiodes with independent readouts was mounted in a vacuum chamber and tested with X-ray sources. The detector is sensitive from 1 to 30 keV with an effective area of 6mm2. The detector performs best at -35∘C with an energy resolution of 220 eV (FWHM, full-width at half-maximum) at 5.9 keV, and is able to operate at room temperature, +25∘C, with moderate resolution around 760 eV (FWHM). The response of the top layer sensor is highly uniform across the sensitive area. This large-format silicon detector is appropriate for future X-ray timing missions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 564, Issue 1, 1 August 2006, Pages 347–351
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 564, Issue 1, 1 August 2006, Pages 347–351
نویسندگان
Hua Feng, Philip Kaaret, Hans Andersson,