کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1832937 | 1027528 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Etched trenches in technology of monolithic strip detectors based on semi-insulating GaAs
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Etched trenches in technology of monolithic strip detectors based on semi-insulating GaAs Etched trenches in technology of monolithic strip detectors based on semi-insulating GaAs](/preview/png/1832937.png)
چکیده انگلیسی
The influence of the etched trenches on detection properties of strip GaAs detectors is described together with results obtained by transverse laser scan across the strips. The charge collection efficiency (CCE) shows an improvement in the case of trenches placed on the top (blocking) side of detector at lower bias voltages applied (<250 V), while noticeable worsen was observed in the case of bottom trenches. On the contrary, the energy resolution improved by the detectors with trenches either on the top or bottom side. Transverse scans across the top detector strips by pulsed red laser indicate different tendency of electric field development with bias voltage depending on the side of etching treatment.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 563, Issue 1, 1 July 2006, Pages 74–77
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 563, Issue 1, 1 July 2006, Pages 74–77
نویسندگان
Andrea Perd’ochová-Šagátová, Frantis˘ek Dubecký, Vladimír Nec˘as, Vladimír Linhart,