کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1833582 | 1027551 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Measurement of the thickness of an insensitive surface layer of a PIN photodiode
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
We measured the thickness of an insensitive surface layer of a PIN photodiode, Hamamatsu S3590-06, used in the Tokyo Axion Helioscope. We made alpha-particles impinge on the PIN photodiode in various incidence angles and measured the pulse height to estimate the thickness of the insensitive surface layer. This measurement showed its thickness was 0.31±0.02μm on the assumption that the insensitive layer consisted of Si. We calculated the peak detection efficiency for low energy X-rays in consideration of the insensitive layer and escape of X-rays and Auger electrons. This result showed the efficiency for 4–10keV X-rays was more than 95%.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 557, Issue 2, 15 February 2006, Pages 684–687
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 557, Issue 2, 15 February 2006, Pages 684–687
نویسندگان
Y. Akimoto, Y. Inoue, M. Minowa,