کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1859133 | 1037217 | 2015 | 5 صفحه PDF | دانلود رایگان |
• Band structure of silicene with a line defect.
• Spin helical states around the line defect and their probability distribution features.
• Spin transport along the line defect and that in the bulk silicene.
We investigated the electronic structure of a silicene-like lattice with a line defect under the consideration of spin–orbit coupling. In the bulk energy gap, there are defect related bands corresponding to spin helical states localized beside the defect line: spin-up electrons flow forward on one side near the line defect and move backward on the other side, and vice versa for spin-down electrons. When the system is subjected to random distribution of spin-flipping scatterers, electrons suffer much less spin-flipped scattering when they transport along the line defect than in the bulk. An electric gate above the line defect can tune the spin-flipped transmission, which makes the line defect as a spin-controllable waveguide.
Journal: Physics Letters A - Volume 379, Issue 4, 6 February 2015, Pages 396–400