Effect of an in-plane magnetic field and a δ-doping on the electron transport in a nonmagnetic heterostructure

• We propose one spintronic device modulated by the delta-doping and the magnetic field.
• Electron transport properties are obviously affected by the magnetic field.
• Electron transport properties strongly depend on the weight and position of the delta-doping.
• Electron transport properties are obviously dependent on the wave vector.
• These finds are very helpful for designing the delta-doping-tunable spintronic devices.

The electron tunneling through a nonmagnetic heterostructure modulated by both the in-plane magnetic field and the δ-doping has been investigated in detail using the transfer-matrix method. The numerical results indicate that, in such a nonmagnetic device, one can obtain the considerable spin polarization which is dependent on the in-plane magnetic field and the δ-doping as well as the wave vector in the plane of the barrier. Thus, we can design the spintronic devices based on nonmagnetic heterostructures controlled by the in-plane magnetic field and the δ-doping as well as the wave vector.