کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1860882 | 1037464 | 2009 | 4 صفحه PDF | دانلود رایگان |
Temperature-dependent photoluminescence (PL) from two multi-quantum well (MQW) structures with different barrier widths has been systematically investigated. The PL band in the well layers is dominated by localized excitons (LE), D0X, and D0X-1LO. As the temperature increases, luminescence from the excitons localized in the well layers shows an ‘S’-shaped shift in the thin barrier MQW whereas a monotonic redshift is observed from the thick barrier MQW. Quenching of well-related emission is associated with delocalization of the excitons in the potential minima induced by interface fluctuations or alloy disorder. The activation energies correlated with depths of the local potential are deduced to be 7 and 17 meV for the thick and thin barrier MQWs, respectively.
Journal: Physics Letters A - Volume 373, Issue 36, 31 August 2009, Pages 3281–3284