کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1862815 1530612 2012 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Interfacial misfit dislocation scattering effect in two-dimensional electron gas channel of GaN heterojunction
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک و نجوم (عمومی)
پیش نمایش صفحه اول مقاله
Interfacial misfit dislocation scattering effect in two-dimensional electron gas channel of GaN heterojunction
چکیده انگلیسی

Interfacial misfit dislocation in AlxGa1 − xN/GaN heterojunction was studied as a function of barrier layer thickness and lattice mismatch degree. The sheet charge density induced by interfacial dislocation was obtained. Based on the interfacial dislocation model, the mobility was calculated in two-dimensional electron gas channel. It was found that the mobility was dominated by the interfacial dislocation scattering at low temperature, and depended on the barrier layer thickness and lattice mismatch degree.


► Interfacial misfit dislocation in AlxGa1 − xN/GaN heterojunction was studied.
► The sheet charge density induced by interfacial dislocation was obtained.
► The mobility limited by interfacial dislocation was calculated.
► The mobility was dominated by interfacial dislocation scattering at low temperature.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 376, Issues 10–11, 20 February 2012, Pages 1067–1071
نویسندگان
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