Keywords: 2DEG; Oxide heterointerface; LaAlO3/SrTiO3; Complex oxides; Perovskite oxides;
مقالات ISI (ترجمه نشده)
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Keywords: 2D; Two-Dimensional; 2DEG; Two-Dimensional Electron Gas; 2DPS; Two-Dimensionally-Periodic Slab; 3D; Three-Dimensional; AES; Auger Electron Spectroscopy; AFM; Atomic Force Microscopy; ARUPS; Angle-Resolved Ultraviolet Photoemission Spectroscopy; B3LYP; Bec
Keywords: Brightness temperature; HEMT; Ultra-low power consumption; 2DEG; Back action
Keywords: Spin–orbit coupling; Weak localization; 2DEG; Spintronics
Keywords: Spin–orbit coupling; Weak localization; 2DEG; Spintronics
Keywords: Mobility spectrum analysis; Magneto-transport; 2DEG; Mobility distribution; AlGaN/GaN;
Keywords: 2DEG; two-dimensional electron gas; 3HeSE; 3He spin echo (spectroscopy); AES; Auger electron spectroscopy; AM; alkali metal; amu; atomic mass units; ASP; acoustic surface Plasmon; CDO; charge density oscillation; DFPT; density functional perturbation theo
Keywords: GaN; HEMT; Polarization; 2DEG
Electron transport in AlGaN/GaN HEMTs using a strain model
Keywords: AlGaN/GaN; Strain; 2DEG; Electron transport;
Origin of the two-dimensional electron gas at the interface of NdGaO3/SrTiO3
Keywords: 2DEG; First-principles-calculation; Oxygen vacancy;
How to extract the surface potential profile from the ARPES signature of a 2DEG
Keywords: ARPES intensity distribution; 2DEG; Matrix elements; Surface band bending;
Anisotropic magnetoresistance in 2DEG with Rashba spin-orbit coupling
Keywords: Rashba spin-orbit coupling; 2DEG; Boltzmann equation; anisotropic magnetoresistance;
Evidence for absence of metallic surface states in BiO2-terminated BaBiO3 thin films
Keywords: BaBiO3; In-situ ARPES; 2DEG;
Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor
Keywords: AlGaN/GaN; Pt; HEMT; H2S; Gas sensor; 2DEG;
LetterPerformance enhancement of AlGaN/GaN nanochannel omega-FinFET
Keywords: AlGaN/GaN; Nanochannel; Omega-gate; FinFET; 2DEG; Breakdown voltage; Subthreshold slope;
Spin-polarization-induced anisotropic magnetoresistance in a two-dimensional Rashba system
Keywords: 2DEG; Anisotropic magnetoresistance; Rashba effect; Edelstein effect; Spin polarization;
Luminescence related to two-dimensional gas in ZnO/ZnMgO heterostructures
Keywords: ZnO/ZnMgO heterostructures; Luminescence; 2DEG;
Effect of conduction band nonprabolicity on the Rashba spin splitting of AlGaN/GaN QWs
Keywords: Spin-orbit coupling; Rashba spin splitting; Conduction band nonprabolicity; 2DEG; Iterative method;
Electrical transportation and piezotronic-effect modulation in AlGaN/GaN MOS HEMTs and unpassivated HEMTs
Keywords: AlGaN/GaN HEMT; 2DEG; Piezotronic-effect; External stress;
Characterization of 2DEG in AlGaN/GaN heterostructure by Hall effect
Keywords: Hall effect; AlGaN/GaN; 2DEG; Electron density; Electron mobility;
Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT
Keywords: 2DEG; GaN; High -k; MOS-HEMT; TCAD;
DC and microwave characteristics of Lg 50Â nm T-gate InAlN/AlN/GaN HEMT for future high power RF applications
Keywords: HEMT; 2DEG; Back-barrier; Cut-off frequency; DC and Microwave characteristics;
Analytical models for the 2DEG concentration and gate leakage current in AlGaN/GaN HEMTs
Keywords: 2DEG; AlGaN/GaN HEMT; DoS (Density of States); Gate leakage current; Interface traps; Thermionic emission; Trap-Assisted Tunneling (TAT);
Static and dynamic characteristics of Lg 50Â nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications
Keywords: HEMT; 2DEG; Static and dynamic characteristics; Cut-off frequency; Back-barrier;
A survey of Gallium Nitride HEMT for RF and high power applications
Keywords: HEMT; Trap; Field plate; 2DEG; Polarization;
Effects of electron correlations application to Ti atoms on physical properties of (LaMnO3)m/(SrTiO3)n superlattices
Keywords: Superlattice supercell; (LaMnO3)m/(SrTiO3)n superLattices (SL); DFT; Stoner–Wolfarth model; MFA; Curie temperature; 2DEG
Two dimensional electron gas in a hybrid GaN/InGaN/ZnO heterostructure with ultrathin InGaN channel layer
Keywords: InGaN; GaN; ZnO; 2DEG; Short-channel effects
Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si3N4 passivation layer
Keywords: AlGaN; GaN; 2DEG; SiN passivation; Scattering analysis; Dislocation density
Oxide interfacial charge engineering towards normally-off AlN/GaN MOSHEMT
Keywords: 2DEG; AlN/GaN; MOSHEMT; Normally-off; Oxide interfacial charge; TCAD
The ferroelectric field effect on the two-dimensional electron gas at LaAlO3/SrTiO3 (001) interface: Insights from first principle simulations
Keywords: 2DEG; Ferroelectric field effect; BaTiO3; MIT; Intrinsic electric field
Impact of InGaN back barrier layer on performance of AIInN/AlN/GaN MOS-HEMTs
Keywords: InGaN back barrier; InAlN/GaN heterostructure; Short channel effects; 2DEG; Heterostructure; MOSHEMT
Comparison of electrical, optical and structural properties of epitaxially grown HEMT's type AlGaN/AlN/GaN heterostructures on Al2O3, Si and SiC substrates
Keywords: AlGaN/AlN/GaN; Heterostructures; HEMT; Si; Al2O3; SiC; 2DEG;
Variation in anisotropic dispersion relations of self-assembled monolayer on Cu(001) induced by modulation of molecular structures
Keywords: Scanning tunneling microscopy; Anisotropic dispersion relation; β-Alanine; Amino acid; 2DEG; Cu(001);
Effects of sidewall MOS channel on performance of AlGaN/GaN FinFET
Keywords: AlGaN/GaN; 2DEG; FinFET; Fin width; TMAH solution; Trapping/detrapping;
Numerical investigation of the 2DEG properties of AlGaN/AlN/GaN HEMT structures with InGaN/GaN MQW back-barrier structure
Keywords: AlGaN; InGaN; GaN; InGaN/GaN MQW; 2DEG; Schrödinger–Poisson equation
The effect of in-plane strain on the electronic properties of LaAlO3/SrTiO3 interface
Keywords: In-plane strain; 2DEG; LaAlO3/SrTiO3 interface
Influence of spatially varying pseudo-magnetic field on a 2D electron gas in graphene
Keywords: 2DEG; Graphene; Landau levels; Hall conductivity
2DEG on a cylindrical shell with a screw dislocation
Keywords: 2DEG; Electron gas; Landau levels; Hall conductivity;
Impedance-based interfacial analysis of the LaAlO3/SrTiO3 oxide heterostructure involving a 2-dimensional electron gas layer
Keywords: Impedance spectroscopy; 2DEG; Interface; LaAlO3/SrTiO3; Oxygen vacancies
Study of the nonlinear Rashba spin splitting in AlGaN/GaN heterostructures by the perturbative expansion method
Keywords: Spin-orbit coupling; Nonlinear Rashba spin splitting; 2DEG;
Influence of growth morphology on electrical and thermal modeling of AlGaN/GaN HEMT on sapphire and silicon
Keywords: AlGaN/GaN HEMT; Scattering; Mobility; Parasitic resistance; 2DEG; Thermal conductivity
Interface DOS dependent analytical model development for DC characteristics of normally-off AlN/GaN MOSHEMT
Keywords: 2DEG; AlN/GaN; DOS; HEMT; MOSHEMT; Quantum capacitance;
The influence of electron confinement, quantum size effects, and film morphology on the dispersion and the damping of plasmonic modes in Ag and Au thin films
Keywords: 2DEG; two-dimensional electron gas; 3DEG; three-dimensional electron gas; AERPY; angle- and energy-resolved photo-yield; AES; Auger electron spectroscopy; ARPES; angle-resolved photoemission spectroscopy; ASP; acoustic surface plasmon; BP; bulk plasmon; C
Wave vector dependent Rashba coefficient and nonlinear Rashba spin splitting in AlGaN/GaN quantum wells
Keywords: Spin-orbit coupling effect; Nonlinear Rashba spin splitting; 2DEG;
Phonon-limited electron mobility in III-nitride heterojunctions
Keywords: AlN; GaN; Hall mobility; Heterojunction; InN; Iteration; Relaxation rate; 2DEG
Influence of the Al concentration on the electronic properties of coupled and uncoupled AlxGa1−xAs/AlAs/AlyGa1−yAs double quantum wells
Keywords: Double quantum well; AlGaAs; Shubnikov-de Haas; Electronic property; 2DEG
Carbon n-δ-doping effects on electronic and optical properties in GaAs/AlGaAs HEMTs
Keywords: Carbon n-δ-doping; 2DEG; Activation energy; Photoluminescence
Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
Keywords: pH sensor; Ion sensitive field effect transistor; AlInN/GaN; 2DEG; Chemical sensor; HEMT;
Numerical simulation of local doped barrier layer AlGaN/GaN HEMTs
Keywords: GaN; HEMT; 2DEG; Power density;
Performance assessment of gate material engineered AlInN/GaN underlap DG MOSFET for enhanced carrier transport efficiency
Keywords: Dual material gate; Gate engineering; Underlap DG MOSFET; Heteorstructure; Lattice matching; AlInN/GaN; 2DEG;