Characterization of 2DEG in AlGaN/GaN heterostructure by Hall effect

Hall Effect measurement is carried out on an epitaxial GaN wafer. Van Der Pauw like structure is “hand-insulated” with a diamond probe and used to perform this experiment. Good linearity of VH and a constant value of Ns,Hall versus the injected current is obtained. This figure proves the feasibility of our methodology on partially (without any patterning nor metallization) processed GaN wafers.85