Electric switch of magnetoresistance in the Pb(Zr0.2Ti0.8)O3/(La0.67Ca0.33)MnO3 heterostructure film

In this work, the Pb(Zr0.2Ti0.8)O3/(La0.67Ca0.33)MnO3 heterostructure film is deposited on the Pt/Ti/SiO2/Si wafer. The dominant transport is the inelastic hopping conduction. Due to the interaction between ferroelectric domain and magnetic polaron, film still exhibits weak ferromagnetism above the Curie temperature. Under lower bias voltage, the non-zero sequential magnetoresistance occurs on the magnetic granular junction. As soon as bias voltage exceeds the coercive voltage, the ferroelectric domain is aligned, consequently the magnetoresistance tends to vanish. Such electric switch of magnetoresistance is potential for the electric-write magnetic-read storage device.