کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1863914 | 1037691 | 2014 | 7 صفحه PDF | دانلود رایگان |
• Spin-polarized transport in a δ-doped magnetic-barrier nanostructure is explored.
• Both magnitude and sign of spin polarization depend on the δ-doping.
• A controllable spin filter can be achieved for spintronics applications.
We theoretically investigate the electron spin transport properties through a δ-doped magnetic-barrier nanostructure, which can be realized experimentally by depositing two identical ferromagnetic stripes with the opposite in-plane magnetization on the top of a semiconductor heterostructure in parallel configuration and by using atomic layer doping technique. The δ-doping dependent transmission, conductance and spin polarization are calculated exactly by analytically solving Schrödinger equation of the spin electron. It is found that the electronic spin-polarized behavior in this device can be manipulated by changing the weight and/or the position of the δ-doping. Therefore, such a device can be used as a controllable spin filter, which may be helpful for spintronics applications.
Journal: Physics Letters A - Volume 378, Issue 43, 5 September 2014, Pages 3189–3195