Neutron irradiation and frequency effects on the electrical conductivity of nanocrystalline silicon carbide (3C-SiC)

• Radiation-induced conductivity (RIC) was observed on the nanocrystalline 3C-SiC.
• Electrical conductivity increases up to 7.5×10−4 S/m7.5×10−4 S/m or 5.5 times after neutron irradiation.
• Radiation-induced defects change the concentration of charge carriers on the conduction band.
• Conduction activation energy decreases with the increase of irradiation period.
• In the 3C-SiC nanomaterial ionic or dipolar type of conductivity is dominant.

In this present work nanocrystalline silicon carbide (3C-SiC) has been irradiated with neutron flux (∼2×1013 ncm−2s−1) up to 20 hours at different periods. Electrical conductivity of nanocrystalline 3C-SiC particles (∼18 nm) is comparatively analyzed before and after neutron irradiation. The frequency dependencies of electrical conductivity of 3C-SiC nanoparticles is reviewed at 100 K–400 K temperature range before and after irradiation. The measurements were carried out at 0.1 Hz–2.5 MHz frequency ranges and at different temperatures. Radiation-induced conductivity (RIC) was observed in the nanocrystalline 3C-SiC particles after neutron irradiation and this conductivity study as a function of frequency are presented. The type of conductivity has been defined based on the interdependence between real and imaginary parts of electrical conductivity function. Based on the obtained results the mechanism behind the electrical conductivity of nanocrystalline 3C-SiC particles is explained in detail.