کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1866837 1038076 2015 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Controllable resonant tunnelling through single-point potentials: A point triode
ترجمه فارسی عنوان
تونل زنی تشدید کننده کنترل شده از طریق پتانسیل تک نقطه ای: یک نقطه سه گانه
کلمات کلیدی
تعاملات بالقوه قابل کنترل نقطه، تونل زنی رزونانس، استراتژیک
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک و نجوم (عمومی)
چکیده انگلیسی


• The zero-thickness limit of three-layer heterostructures is described in terms of point interactions.
• The effect of resonant tunnelling through these single-point potentials is established.
• The resonant tunnelling is shown to be controlled by a gate voltage.

A zero-thickness limit of three-layer heterostructures under two bias voltages applied externally, where one of which is supposed to be a gate parameter, is studied. As a result, an effect of controllable resonant tunnelling of electrons through single-point potentials is shown to exist. Therefore the limiting structure may be termed a “point triode” and considered in the theory of point interactions as a new object. The simple limiting analytical expressions adequately describe the resonant behaviour in the transistor with realistic parameter values and thus one can conclude that the zero-range limit of multi-layer structures may be used in fabricating nanodevices. The difference between the resonant tunnelling across single-point potentials and the Fabry–Pérot interference effect is also emphasized.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 379, Issue 6, 6 March 2015, Pages 511–517
نویسندگان
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