X-ray lithography of SU8 photoresist using fast miniature plasma focus device and its characterization using FTIR spectroscopy

• Demonstration of X-ray lithography (XRL) using miniature plasma focus device.
• Dose for SU8 photoresist crosslinking is estimated using FTIR spectroscopy.
• 200 mJ/cm2200 mJ/cm2 dose is sufficient for the fabrication of desired micro-patterns.
• Use of stencil mask to minimize X-ray absorption.
• Major design considerations for XRL process setup inside plasma focus chamber.

X-ray lithography (XRL) can be a potential candidate for next generation lithography. The main objective of this study is to demonstrate XRL using fast miniature plasma focus (FMPF) device as the X-ray source. The advantage of using FMPF as X-ray source is the smaller X-ray spot size due to smaller electrode dimensions leading to higher resolution micro-components. Some of the major hurdles in the realization of XRL using FMPF device have been addressed and FMPF based XRL is demonstrated for the first time. The dosage required for sufficient crosslinking in SU8 photoresist is determined using Fourier transform infrared spectroscopy analysis.