کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1867118 | 1038174 | 2011 | 6 صفحه PDF | دانلود رایگان |
We develop a tight-binding theory to study the electronic transport through an extended line defect in monolayer graphene. After establishing an analytical expression of the transmission probability, we clarify the following issues concerning the valley polarization in the electronic transport process. Firstly, we find that the valley polarization is robust in the total linear dispersion region. More interestingly, we find that the lattice deformation around the line defect play an important role in tuning the incident angle for complete transmission. Finally, we indicate that next nearest neighbor interaction only causes a small suppression to the valley polarization.
► The valley polarization is robust in the total linear dispersion region.
► Lattice deformation tunes incident angle for complete transmission in low energy.
► The influence of next nearest neighbor interaction is investigated.
Journal: Physics Letters A - Volume 376, Issue 2, 5 December 2011, Pages 136–141