Photostimulated luminescence properties of BaFBr:Eu under ion irradiation

• Photostimulated luminescence (PSL) behavior of BaFBr:Eu2+ is analyzed for ion irradiations.
• PSL intensity as a function of fluence is described based on a trapping model.
• It is shown that the decrease in the PSL intensity is due to the trapping of photostimulated electrons to irradiation defects.
• It is shown that the trapping process is quantitatively different for the sample with different Eu2+ concentrations.
• It is strongly suggested that the range of the photostimulated electrons is larger than 10 nm.

The photostimulated luminescence (PSL) properties of the phosphor BaFBr:Eu after ion beam irradiation was analyzed; in particular, the PSL intensity dependent on ion fluence. The PSL intensity increased linearly with the ion fluence up to 1012 ions/cm2, and subsequently decreased gradually. The ion fluence dependence was observed to be similar among samples containing different F centers or different Eu concentrations. The fluence dependence was quantitatively analyzed based on a trapping model, in which competition between the trapping processes to storage centers and radiation defects is assumed; the model explained the experimental data quantitatively. The results indicate that radiation defects influence the PSL properties via the trapping of photostimulated electrons.