Performance characteristics of p-i-n hetero-junction organic photovoltaic cell with CuPc:F4-TCNQ hole transport layer

We have investigated the effect of strong p-type organic semiconductor F4-TCNQ-doped CuPc hole transport layer on the performance of p-i-n hetero-junction photovoltaic device from ITO/PEDOT:PSS/CuPc:F4-TCNQ (5 wt%)/CuPc:C60 (blending ratio 1:1)/C60/BCP/LiF/Al, fabricated via vacuum deposition process and have evaluated the J–V characteristics such as short circuit current (Jsc), open circuit voltage (Voc), fill factor (FF) and energy conversion efficiency (ηe) of the device. By doping of F4-TCNQ into CuPc hole transport layer, absorption intensities in absorption spectra were increased, which supports that uniform dispersion of organic molecules in the hole transport layer with lowered value of surface roughness can be obtained. Eventually, current injection was enhanced through the layer, which comparatively improves the performance of the photovoltaic cell with energy conversion efficiency of 0.50% in this study.