کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
231658 | 1427445 | 2009 | 7 صفحه PDF | دانلود رایگان |

A physical model is presented to describe the kinds of static forces responsible for adhesion of nano-scale copper metal particles to silicon surface with a fluid layer. To demonstrate the extent of particle cleaning, equilibrium separation distance (ESD) and net adhesion force (NAF) of a regulated metal particle with different radii (10–300 nm) on the silicon surface in CO2-based cleaning systems under different pressures were simulated. Generally, increasing the pressure of the cleaning system decreased the net adhesion force between spherical copper particle and silicon surface entrapped with medium. For CO2 + isopropanol cleaning system, the equilibrium separation distance exhibited a maximum at temperature 313.15 K in the regions of pressure space (1.84–8.02 MPa). When the dimension of copper particle was given, for example, 50 nm radius particles, the net adhesion force decreased and equilibrium separation distance increased with increased pressure in the CO2 + H2O cleaning system at temperature 348.15 K under 2.50–12.67 MPa pressure range. However, the net adhesion force and equilibrium separation distance both decreased with an increase in surfactant concentration at given pressure (27.6 or 27.5 MPa) and temperature (318 or 298 K) for CO2 + H2O with surfactant PFPE COO−NH4+ or DiF8-PO4−Na+.
The physical model is presented to describe the effect of pressure on static forces for the removal of nano-scale copper particles in hierarchy of the CO2-based solvent systems and develop an understanding of the mechanism of the metal residue removal. The simulated results demonstrated that increasing pressure of the cleaning system decreased the net adhesion force between copper particle and silicon surface entrapped with medium for different particle radii.Figure optionsDownload as PowerPoint slide
Journal: The Journal of Supercritical Fluids - Volume 49, Issue 2, June 2009, Pages 182–188