Deposition kinetics and narrow-gap-filling in Cu thin film growth from supercritical carbon dioxide fluids

We have developed a flow-type reaction system that enables independent control of each deposition parameter at a constant value. Here we studied the deposition kinetics and narrow-gap-filling of copper thin film in supercritical carbon dioxide fluids using hexafluoroacetylacetonatecopper (Cu(hfac)2) as a precursor. From the temperature dependence of the growth rate, the activation energy for Cu growth was determined at 0.45±0.090.45±0.09 eV. The dependences of the growth rate on the H2 and Cu(hfac)2 concentrations were studied, and an apparent rate equation was obtained. The gap-filling property was found to improve as H2 concentration increases. The crystallographic texture of the obtained film was also studied, and (1 1 1) preferential films were obtained when the H2 concentration was high.