Atomic layer deposition of TiO2 films on particles in a fluidized bed reactor

Atomic layer deposition (ALD) of controlled-thickness TiO2 films was carried out on particle substrates in a fluidized bed reactor for the first time. Films were deposited on 550 nm SiO2 spheres and 65 nm ZnO nanoparticles for enhanced optical properties. Nanoparticles were fluidized with the assistance of a magnetically-coupled stirring unit. The metalorganic precursor titanium tetraisopropoxide was used here followed by either H2O or H2O2 to deposit TiO2 at various substrate temperatures. Growth rates of 0.01 nm/cycle and 0.04 nm/cycle were achieved when using H2O and H2O2 as the oxidizer, respectively. These conformal TiO2 films were verified using HRTEM, ICP–AES, XPS and UV absorbance measurements. The specific surface area changed appropriately after the particle size increased by the deposition of films with a given density, which showed that primary particles were not agglomerated together due to the coating process. In situ mass spectrometry was used to monitor reaction progress throughout each ALD reaction cycle. Bulk quantities of powder were successfully functionalized by TiO2 nanofilms without wasting excess precursor.

Atomic layer deposition (ALD) of controlled-thickness TiO2 films was carried out on particle substrates in a fluidized bed reactor for the first time. The specific surface area changed appropriately after the particle size increased by the deposition of films with a given density, which showed that primary particles were not agglomerated together due to the coating process.Figure optionsDownload as PowerPoint slide