Thin film n-titanium oxide photoanodes for photoelectrochemical production of hydrogen

The semiconductor photoanodes made of thin film titanium oxide were prepared at room temperature by anodization of titanium plates in the hydrofluoric acid solution at direct bias. The influence of the change of the titanium oxide film growth conditions (concentration of hydrofluoric acid, voltage, duration of anodization process) and subsequent heat treatment of films on the photocurrent and current–voltage characteristics of photoelectrodes were investigated. The influence of the electrolyte concentration change on photoelectrochemical behaviour of thin film titanium oxide photoanodes was investigated.